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| SMD Type Transistors Wide-Band Amplifier Applications 2SA1575 Features High fT.. High breakdown voltage. Small reverse transfer capacitance and excellent. High-frequency characteristic. Adoption of FBET process. Absolute Maximum Ratings TA=25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector current (pulse) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC 1.3 Tj Tstg 150 -55 to +150 W Rating -200 -200 -4 -100 -200 500 Unit V V V mA mA mW www.kexin.com.cn 1 SMD Type Transistors Diodes Wide-Band Amplifier Applications 2SA1575 Electrical Characteristics TA=25 Parameter Collector-base Breakdown voltage Collector-emitter Breakdown voltage Emitter-base Breakdown voltage Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Reverse Transfer Capacitance 3 Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE = -10 V , IC = -60 mA VCE(sat) VBE(sat) fT Cob Cre IC = -20 mA , IB = -2 mA IE = -20 mA , IB = -2 mA VCE = -30 V , IC= -30 mA VCB = -30 V , IE = 0 , f = 1MHz VCB= -30 V, f = 1MHz 400 2.3 1.7 20 -1.0 -1.0 V V MHz pF pF Test conditions IC = -10 iA , IE = 0 IC = -1mA ,RBE = IE = -100 iA , IC = 0 VCB = -150 V , IE = 0 VEB = -2 V , IC = 0 VCE = -10 V , IC = -10 mA 40 Min -200 -200 -4 -0.1 -1.0 320 Typ Max Unit V V V iA iA hFE Classification Marking hFE 40 C to 80 60 D to 120 100 E to 200 160 F to 320 2 www.kexin.com.cn |
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